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| PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR Features * Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. * Industry standard TO-252AA package * Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.82V @VGE = 15V, IC = 12A N-channel Benefits * Generation 4 IGBTs offer highest efficiency * Optimized for specific application conditions * High power density and current rating D-Pak TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 22 12 44 44 20 5.0 66 26 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. --- --- 0.3 (0.01) Max. 1.9 50 --- Units C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2/22/01 IRG4RC20F Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.72 -- 1.82 VCE(ON) Collector-to-Emitter Saturation Voltage -- 2.42 -- 2.04 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance 5.2 7.75 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 2.1 IC = 12A VGE = 15V -- IC = 22A See Fig.2, 5 V -- IC = 12A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 12A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 27 40 IC = 12A 4.8 6.8 nC VCC = 400V See Fig. 8 11.4 17 VGE = 15V 26 -- 24 -- TJ = 25C ns 194 290 IC = 12A, VCC = 480V 226 340 VGE = 15V, RG = 50 0.19 -- Energy losses include "tail" 0.92 -- mJ See Fig. 9, 10, 14 1.11 1.4 25 -- TJ = 150C, 26 -- IC = 12A, VCC = 480V ns 263 -- VGE = 15V, RG = 50 443 -- Energy losses include "tail" 1.89 -- mJ See Fig. 11, 14 7.5 -- nH Measured 5mm from package 540 -- VGE = 0V 37 -- pF VCC = 30V See Fig. 7 7.0 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4RC20F 30 For both: Triangular wave: Load C urren t (A ) Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified Power Dissipation = 15W 20 Square wave: 60% of rated voltage 10 Clamp voltage: 80% of rated Ideal diodes 0 0.1 1 10 A 100 f, F requency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) Collector-to-Emitter Current (A) 100 TJ = 150C I C , Collector-to-Emitter Current (A) TJ = 25C TJ = 150 C 10 TJ = 25 C V CC = 50V 5s PULSE WIDTH 6 8 10 12 14 C, VGE = 15V 20s PULSE WIDTH ) V I ! " # 1 CE , Collector-to-Em itter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4RC20F 25 3.0 20 15 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 18 A Maximum DC Collector Current(A) 2.0 IC = 9A 10 IC = 4.5 A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC20F 1000 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 12A C, Capacitance (pF) 15 600 Cies 10 400 5 200 Coes Cres 0 1 10 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.72 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.71 I C = 9.0A 10 50 RG = 50Ohm VGE = 15V VCC = 480V IC = 24 A IC = 12 A 1 0.70 IC = 6A 0.68 0.67 0.66 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) () TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4RC20F 5.0 Total Switching Losses (mJ) 3.0 I C , Collector Current (A) RG TJ VCC 4.0 VGE = 50 50Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 o C 10 2.0 1.0 0.0 5 10 15 20 25 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 6 www.irf.com IRG4RC20F 90 % 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50) -A5.46 (.2 15 ) 5.21 (.2 05 ) 4 1.2 7 (.050 ) 0.8 8 (.035 ) 2 .3 8 (.09 4) 2 .1 9 (.08 6) 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 6.45 (.2 45 ) 5.68 (.2 24 ) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 3 -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) M AMB 0.51 (.0 20 ) M IN. 1 0.42 (.4 10 ) 9 .4 0 (.37 0) LEAD ASSIGNMENTS LE AD A SS IG N M E NTS 1 - GATE 1 - GCOLLECTOR ATE 22 - D RA IN 3 - EMITTER 3 - SO U R C E 4 - COLLECTOR 4 - D RA IN 0 .58 (.0 23) 0 .46 (.0 18) N O TE S: 1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 . 2 C O N TR O LLING D IM EN S IO N : INC H . 3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A. 4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP, SO L D ER D IP M AX. +0 .16 (.00 6). www.irf.com 7 IRG4RC20F D-Pak (TO-252AA) Tape & Reel Information TR TRR TR L 1 6.3 ( .641 ) 1 5.7 ( .619 ) 16.3 ( .64 1 ) 15.7 ( .61 9 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 2/01 8 www.irf.com |
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